Is this you? As a journalist, you can create a free Muck Rack account to customize your profile, list your contact preferences, and upload a portfolio of your best work.
Claim your profile
Articles by Heike Mueller
ROHM Strengthens Supply Capability for GaN Power Devices
Santa Clara, CA and Kyoto, Japan, Feb. 26, 2026 (GLOBE NEWSWIRE) -- ROHM Co., Ltd. (hereinafter “ROHM”) today announced it has decided to integrate its own development and manufacturing technologies for GaN power devices with the process technology of TSMC, with which ROHM has an ongoing partnership, to establish an end-to-end production system within the ROHM Group.
ROHM’s New Compact, Highly Reliable Package Added to Automotive 40V/60V MOSFET Lineup
Santa Clara, CA and Kyoto, Japan, Feb. 18, 2026 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the expansion of its lineup of low-voltage (40V/60V) MOSFETs for automotive applications – such as main inverter control circuits, electric pumps, and LED headlights – by introducing latest products adopting the new HPLF5060 package (4.9mm × 6.0mm). In recent years, automotive low-voltage MOSFETs have been trending toward smaller packages, such as the 5060-size and even more compact options.
ROHM’s New LDO Regulators with 500mA Output Current: Achieving Stable Operation with Ultra-Small Capacitors
Santa Clara, CA and Kyoto, Japan, Jan. 27, 2026 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced it has developed the “BD9xxN5 Series” of LDO regulator ICs with 500mA output current, featuring its proprietary ultra-stable control technology “Nano Cap™”. This series comprises 18 products designed for 12V/24V primary power supply applications used in automotive equipment, industrial equipment, and communication infrastructure.
International Business Times
By: ROHM Semiconductor via GlobeNewswire January 22, 2026 at 17:00 PM EST Santa Clara, CA and Kyoto, Japan, Jan. 22, 2026 (GLOBE NEWSWIRE) -- ROHM today announced it has developed the “UCR10C Series”, which has the industry's highest rated power for 2012-size shunt resistors (10 mΩ to 100 mΩ). Shunt resistors are required to handle higher power for current sensing in both the automotive and industrial equipment markets.
ROHM’s Flexible Brushed DC Motor Driver ICs for a Wide Range of Applications
Santa Clara, CA and Kyoto, Japan, Dec. 17, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced they have developed two new motor driver ICs for brushed DC motors, BD60210FV (20V, 2ch) and BD64950EFJ (40V, 1ch). They are intended for use in home and office appliances such as refrigerators, air conditioners, printers, and robotic vacuum cleaners.
International Business Times
Santa Clara, CA and Kyoto, Japan, Dec. 04, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced they have begun mass production of the SCT40xxDLL series of SiC MOSFETs in TOLL (TO-Leadless) packages. Compared to conventional packages (TO-263-7L) with equivalent voltage ratings and on-resistance, these new packages offer approximately 39% improved thermal performance. This enables high-power handling despite their compact size and low profile.
International Business Times
Santa Clara, CA and Kyoto, Japan, Dec. 02, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced its development of the “RPR-0730”, analog compact optical sensor, capable of high-precision detection of fast-moving objects. This sensor can be widely utilized in consumer and industrial equipment applications, including printers and conveyor systems.
International Business Times
Santa Clara, CA and Kyoto, Japan, Nov. 25, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced it has developed the 100V power MOSFET - RS7P200BM - achieving industry-leading SOA in a 5060-size (5.0mm × 6.0mm) package. This product is ideal for hot-swap circuits in AI servers using 48V power supplies as well as for industrial power supplies requiring battery protection.
International Business Times
Santa Clara, CA and Kyoto, Japan, Nov. 20, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced its expanded lineup of EROM (Embeddable BCI-ROM) models for shunt resistors now available on ROHM’s website. In addition, these models are now standard in Siemens’ electronic thermal design software, Simcenter™ Flotherm™*.
ROHM’s Three-Phase Brushless DC Motor Gate Driver Minimizes FET Heat Generation and EMI
Santa Clara, CA and Kyoto Japan, Nov. 18, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the BD67871MWV-Z, a three-phase brushless DC motor gate driver optimized for medium voltage systems (12 to 48V). Original TriC3™ gate drive technology makes it possible to significantly reduce FET switching loss while maintaining low EMI – overcoming a long-standing trade-off in motor driver IC design.
ROHM Develops Breakthrough Schottky Barrier Diode Combining Low VF and IR for Advanced Image Sensor Protection
Santa Clara, CA and Kyoto, Japan, Oct. 23, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of an innovative Schottky barrier diode that overcomes the traditional V / I trade-off, delivering high reliability protection for a wide range of high-resolution image sensor applications such as ADAS cameras. Modern ADAS cameras and similar systems require higher pixel counts to meet the demand for greater precision.
ROHM Develops Breakthrough Schottky Barrier Diode Combining Low VF and IR for Advanced Image Sensor Protection
Santa Clara, CA and Kyoto, Japan, Oct. 23, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of an innovative Schottky barrier diode that overcomes the traditional VF / IR trade-off, delivering high reliability protection for a wide range of high-resolution image sensor applications such as ADAS cameras. Modern ADAS cameras and similar systems require higher pixel counts to meet the demand for greater precision.
International Business Times
Santa Clara, CA and Kyoto, Japan, Oct. 13, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the release of a new white paper detailing advanced power solutions for AI data centers based on the novel 800 VDC architecture, reinforcing its role as a key semiconductor industry player in driving system innovation. As part of the collaboration announced in June 2025, the white paper outlines optimal power strategies that support large-scale 800 VDC power distribution across AI infrastructure.
ROHM Develops New Smart Switches Optimized for Zonal Controllers
Santa Clara, CA and Kyoto, Japan, Sept. 30, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the release of six new high-side smart switches (IPDs: Intelligent Power Devices) featuring highly accurate current sensing and low ON resistances ranging from 9mΩ to 180mΩ.
International Business Times
Santa Clara, CA and Kyoto, Japan, Sept. 16, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the DOT-247, a new 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx) designed for industrial applications such as PV inverters, UPS systems, and semiconductor relays. This innovative module combines the proven versatility of the widely adopted TO-247 package with enhanced design flexibility and superior power density.
ROHM Develops an Ultra-Compact CMOS Op Amp Featuring Industry-Leading* Ultra-Low Circuit Current
Santa Clara, CA and Kyoto, Japan, Sept. 09, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the TLR1901GXZ, an ultra-compact CMOS operational amplifier (op amp) that achieves the industry’s lowest operating circuit current. Optimized for use as a sensing amplifier, this IC is ideally suited for space-constrained applications such as handheld measurement instruments, wearable devices, and indoor motion detectors.
ROHM’s SiC MOSFETs Adopted in Schaeffler’s New Inverter Brick – Now in Mass Production
Santa Clara, CA and Kyoto, Japan, Sept. 04, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor and leading German automotive supplier Schaeffler today have announced the start of mass production for a new high-voltage inverter brick equipped with ROHM’s SiC (silicon carbide) MOSFET bare chips. Developed under a strategic partnership, the inverter brick is slated for use by a major Chinese automaker.
ROHM at electronica India 2025: Driving Industrial and E-Mobility Innovation with Cutting-Edge Power and Analog Devices
Santa Clara, CA and Bengaluru, India, Aug. 28, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced from September 17th to 19th, it will particpate in electronica India 2025, South Asia's premier trade fair for electronic components, systems, applications, and solutions, held at the Bangalore International Exhibition Centre (BIEC).
ROHM Releases a New Compact PFC + Flyback Control Reference Design for Power Supply Solutions
Santa Clara, CA and Kyoto, Japan, Aug. 21, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the release of its new reference design (REF67004), capable of controlling two commonly used power converter types in consumer and industrial power supply applications with a single MCU: critical conduction mode PFC (Power Factor Correction) and quasi-resonant flyback. This design is part of ROHM’s LogiCoA™ Power Supply Solution that leverages analog-digital hybrid control technology.
ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications
Santa Clara, CA and Kyoto, Japan, July 08, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the AW2K21, a 30V N-channel MOSFET in a common-source configuration that delivers an industry-leading ON-resistance of just 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package. With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow.
ROHM Introduces a New MOSFET for AI Servers Featuring Industry-Leading* SOA Performance and Ultra-Low ON-Resistance
Santa Clara, CA and Kyoto, Japan, July 01, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the launch of the RY7P250BM, a 100V power MOSFET optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies that require robust battery protection. As AI technology rapidly advances, data centers are facing unprecedented processing demands and server power consumption continues to increase annually.
ROHM Launches an Isolated Gate Driver IC Optimized for High-Voltage GaN Devices
Santa Clara, CA and Kyoto, Japan, June 25, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the BM6GD11BFJ-LB, an isolated gate driver IC optimized for driving 600V-class high-voltage GaN HEMTs. When combined with GaN devices, this driver enables stable operation under high-frequency, high-speed switching conditions – contributing to greater miniaturization and efficiency in high-current applications such as motors and server power supplies.
ROHM Builds the Future of AI with Optimized Solutions for NVIDIA 800V Architecture
Santa Clara, CA, June 12, 2025 (GLOBE NEWSWIRE) -- As artificial intelligence continues to redefine the boundaries of computing, the infrastructure powering these advancements must evolve in parallel. A recognized leader in power semiconductor technology, ROHM is proud to be among the key silicon providers supporting NVIDIA’s new 800 V High Voltage Direct Current (HVDC) architecture.
ROHM Develops Breakthrough AI-Equipped MCU
Santa Clara, CA and Kyoto Japan, June 04, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced they have developed AI-equipped MCUs (AI MCUs) – ML63Q253x-NNNxx / ML63Q255x-NNNxx – that enable fault prediction and degradation forecasting using sensing data in a wide range of devices, including industrial equipment such as motors. These MCUs are the industry’s first* to independently execute both learning and inference without relying on a network connection.
ROHM Develops Compact Surface-Mount Near-Infrared LEDs Featuring Industry-Leading Radiant Intensity
Santa Clara, CA and Kyoto, Japan, May 22, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced an expanded portfolio of surface-mount near-infrared (NIR) LEDs with new compact top-view types optimized for applications such as VR/AR devices, industrial optical sensors, and human detection sensors. The demand for advanced sensing technologies utilizing near-infrared (NIR) has grown in recent years, particularly in VR/AR equipment and biosensing devices.
International Business Times
Santa Clara, CA and Kyoto, Japan, April 28, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that SMA Solar Technology AG, a leading global specialist in photovoltaic and storage system technology, has adopted Semikron Danfoss’ Module featuring ROHM’s latest 2kV SiC MOSFETs for its new large-scale power conversion solution “Sunny Central FLEX.” This modular platform is designed to streamline and enhance grid connections for photovoltaic installations, battery storage systems, and...
ROHM Develops New High Power Density SiC Power Modules
Santa Clara, CA and Kyoto, Japan, April 24, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for PFC and LLC converters in onboard chargers (OBC) for xEVs (electric vehicles). The lineup includes six models rated at 750V (BSTxxx1P4K01) and seven products rated at 1200V (BSTxxx2P4K01).
ROHM at PCIM Europe 2025: Powerful Highlights for E-Mobility and Industrial Applications
Santa Clara, CA and Kyoto, Japan, April 17, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced they will participate in PCIM Expo and Conference, the leading international event for power electronics, Intelligent motion, renewable energy and energy management, taking place in Nuremberg, Germany May 6 - 8, 2025.
ROHM Develops Class-Leading* Low ON-Resistance, High-Power MOSFETs for High-Performance Enterprise and AI Servers
Santa Clara, CA and Kyoto, Japan, April 10, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor has developed N-channel power MOSFETs featuring industry-leading* low ON-resistance and wide SOA capability. They are designed for power supplies inside high-performance enterprise and AI servers. The advancement of high-level data processing technologies and the acceleration of digital transformation have increased the demand for data center servers.
Date palm acclimates to aridity by diverting organic osmolytes for root osmotic adjustment in parallel with leaf membrane remodeling and ROS scavenging
Abstract Date palm (Phoenix dactylifera L.) is an important crop in arid regions that is well-adapted to desert ecosystems. To understand the remarkable ability to grow and yield in water-limited environments, experiments were conducted in a simulated desert environment with water-withholding for up to four weeks. In response to drought, root, rather than leaf, osmotic strength increased, with sugars contributing more to the osmolyte increase than minerals.
BW/4HANA Reporting on alternative time dimensions without storing redundant data
The purpose of the following blog is to show you an easy to build data model in SAP BW/4HANA to analyze data on different alternative time dimensions without redundant data storage. I developed this scenario in a customer project where I was working as a Consultant. When I showed the data model to some colleagues from SAP development they evaluated the solution as relevant also for other customers. That is why I write this blog.
Show More
loading
Actions
Is this you?
As a journalist, you can create a free Muck Rack account to customize your profile, list your contact preferences, and upload a portfolio of your best work.Get in touch with Heike
Contact Heike, search articles and posts on X, monitor coverage, and track replies from one place.
Learn more about Muck Rack