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Post Annealing Temperature Effects on Electrical Characteristics of Sputtered Mo/β-Ga₂O₃ Vertical Schottky Barrier Diodes

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By Kyung Hwan Kim, Hyungi Kang, Jeong Soo Hong
| preprints.org
You are already at the latest version In this study, Mo/β-Ga₂O₃ vertical Schottky barrier diodes (SBDs) were fabricated using a sputtering process, and the electrical characteristics were evaluated as a function of post-annealing temperature. β-Ga₂O₃ is an ultra-wide bandgap semiconductor (UWBG) with a bandgap of about 4.8 eV and a critical breakdown field of 8 MV/cm, a promising material for high-voltage power switching applications.
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