Jeong Eun Oh

Abstract Click to copy section linkSection link copied! Crystalline oxide semiconductors are promising back-end-of-line (BEOL)-compatible channel materials for AI hardware, yet their nanoscale trap physics remains unclear. Here, we directly mapped and quantified mobility (μ), trap density (Neff), and trap depth in amorphous/nanocrystalline (a/n-) and polycrystalline (p-) In2O3 films using scanning noise microscopy with finite-element analysis.

Advancements and Hurdles in Contact Engineering for Miniaturized Sub-Micrometer Oxide Semiconductor Devices With conventional silicon-based devices approaching their physical scaling limits, alternative channel materials, such as transition metal dichalcogenides and oxide semiconductors (OSs), have emerged as promising candidates for extending Moore’s law and advancing performance, power efficiency, area scaling, and cost-effectiveness.