Leiying Ying

Green resonant cavity light-emitting diodes (RCLEDs) are important components in optical communication and display applications. However, the light output power (LOP) is usually limited. In this study, GaN-based green RCLEDs with a large chip size (900 × 900 μm2) have been fabricated using a silver (Ag) metal mirror as the bottom reflector and a dielectric distributed Bragg reflector (DBR) as the top reflector.

Flexible optoelectronic platforms, which integrate optoelectronic devices on a flexible substrate, are promising in more complex working environments benefiting from the mechanical flexibility. Herein, for the first time to the best of our knowledge, a flexible GaN-based vertical cavity surface-emitting laser (VCSEL) in the ultraviolet A (UVA) range was demonstrated by using a thin-film transfer process based on laser lift-off (LLO) and spin-coating of a flexible substrate.

Indium tin oxide (ITO) is often used as a current spreading layer in the GaN-based vertical-cavity surface-emitting lasers (VCSELs). However, the absorption coefficient of ITO is significant, which reduces the laser output power, raises the threshold, and makes VCSELs hardly lase in the ultraviolet range. To find a transparent conductive structure that can replace ITO, we propose a periodic p-AlGaN/u-GaN/p-GaN structure.