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N. Barri on Muck Rack

N. Barri

As seen in: Semiconductor Engineering
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Impact Of Controlled Mechanical Strain On Electron Transport Characteristics Of Mono And Bi-Layer WSe2

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By M. A. Islam, E. Nicholson, M. Onodera, N. Barri
| Semiconductor Engineering Verified
A technical paper titled “Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2” was published by researchers at University of Toronto, University of Tokyo,  and Stanford University. “Tuning electrical properties of 2D materials through mechanical strain has predominantly focused on n-type 2D materials like MoS2 and WS2, while p-type 2D materials such as WSe2 remain relatively unexplored.
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