Sadhvikas Addamane on Muck Rack

Sadhvikas Addamane

As seen in: MDPI, ACS Publications, Science Magazine, Optica
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Articles

Characterization of Mn5Ge3 Contacts on a Shallow Ge/SiGe Heterostructure

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By Sadhvikas Addamane, Ping Lu, Troy A. Hutchins-Delgado, Tzu-Ming Lu
| MDPI
All articles published by MDPI are made immediately available worldwide under an open access license. No special permission is required to reuse all or part of the article published by MDPI, including figures and tables. For articles published under an open access Creative Common CC BY license, any part of the article may be reused without permission provided that the original article is clearly cited. For more information, please refer to https://www.mdpi.com/openaccess.
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Control of Quantized Spontaneous Emission from Single GaAs Quantum Dots Embedded in Huygens’ Metasurfaces

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By Prasad P. Iyer, Samuel L. Prescott, Sadhvikas Addamane, Hyunseung Jung
| ACS Publications
Download Hi-Res ImageDownload to MS-PowerPointCite This:Nano Lett. 2024, XXXX, XXX Terms & Conditions Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses).
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Enhancement in electro-optic performance of InAlGaAs/GaAs quantum dot lasers by ex situ thermal annealing

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By Sadhvikas Addamane, Shamsul Arafin, Seunghyun Lee, Riazul Arefin
| Optica Verified
Abstract This Letter reports the growth, fabrication, and characterization of molecular beam epitaxy (MBE)-grown quaternary InAlGaAs/GaAs quantum dot (QD) lasers emitting at sub-900 nm. The presence of Al in QD-based active regions acts as the origin of defects and non-radiative recombination centers. Applying optimized thermal annealing annihilates the defects in p-i-n diodes, thus lowering the reverse leakage current by six orders of magnitude compared to as-grown devices.
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