Sengunthar Karthikeyan

Mapping the Ge/InAl(Ga)As Interfacial Electronic Structure and Strain Relief Mechanism in Germanium Quantum Dots Tensile strained germanium (ε-Ge) has found significant interest due to its unique properties for emerging optoelectronic devices. High tensile strained Ge materials with superior quality are still being investigated due to the intrinsic instability of ε-Ge against the formation of stacking faults (SFs).

Lattice matched GeSn/InAlAs heterostructure: Role of Sn in energy band alignment, atomic layer diffusion and photoluminescence Sengunthar Karthikeyan, Rutwik Joshi, Jing Zhao, Robert J. Bodnar, Brenden Magill, Yannick Pleimling, Giti Khodaparast and Mantu Hudait Abstract Germanium alloyed with α-tin (GeSn) transitions to a direct bandgap semiconductor of significance for optoelectronics.