Shuvodip Bhattacharya

Mapping the Ge/InAl(Ga)As Interfacial Electronic Structure and Strain Relief Mechanism in Germanium Quantum Dots Tensile strained germanium (ε-Ge) has found significant interest due to its unique properties for emerging optoelectronic devices. High tensile strained Ge materials with superior quality are still being investigated due to the intrinsic instability of ε-Ge against the formation of stacking faults (SFs).

High carrier lifetimes in epitaxial germanium-tin/Al(In)As heterostructures with variable tin composition Mantu Hudait, Steve Johnston, Michael Clavel, Shuvodip Bhattacharya, Sengunthar Karthikeyan and Rutwik Joshi Abstract Group IV-based germanium-tin (Ge1-ySny) compositional materials have recently shown great promise for infrared detection, light emission and ultra-low power transistors.