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Articles by SenPo Yip
Curvature-programmed nitrate electroreduction via single-atom protrusions on quantum dots
Abstract Local geometric constraints have a substantial influence on electronic structure renormalization, offering a promising approach to enhance single-atom catalysts (SACs) beyond traditional limits. Conventional SACs typically feature planar-confined sites, but three-dimensional configurations remain underexplored.
Induced fit growth of Ga-based semiconductor thin films for brain-inspired electronics and optoelectronics - Light: Science & Applications
Abstract Current crystalline thin-film production techniques typically require specific growth substrates, posing significant challenges for their use in flexible electronics and integrated optoelectronics. In response to these challenges, we introduce a novel method called ‘induced fit growth’, inspired by the induced fit theory in molecular biology.
Synthesis of hexagonal boron arsenide nanosheets for low-power consumption flexible memristors - Nature Communications
Abstract Boron arsenide has recently attracted significant attention for its thermal and electronic properties. However, its lengthy growth process and bulk structure limit its application in advanced semiconductor systems. In this study, we introduce a method for synthesizing ultrathin crystalline hexagonal boron arsenide (h-BAs) nanosheets in large quantities via an in-situ chemical reaction of sodium borohydride with elemental arsenic in a low-pressure hydrogen atmosphere.
Atomic-scale self-rearrangement of hetero-metastable phases into high-density single-atom catalysts for the oxygen evolution reaction - Nature Communications
Abstract Maximizing metal-substrate interactions by self-reconstruction of coadjutant metastable phases can be a delicate strategy to obtain robust and efficient high-density single-atom catalysts. Here, we prepare high-density iridium atoms embedded ultrathin CoCeOOH nanosheets (CoCe-O-IrSA) by the electrochemistry-initiated synchronous evolution between metastable iridium intermediates and symmetry-breaking CoCe(OH)2 substrates.
Multiscale Confinement Engineering for Boosting Overall Water Splitting by One-Step Stringing of a Single Atom and a Janus Nanoparticle within a Carbon Nanotube
Download Hi-Res ImageDownload to MS-PowerPointCite This:ACS Nano 2023, XXXX, XXX Terms & Conditions Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses).
Enhanced performance of near-infrared photodetectors based on InGaAs nanowires enabled by a two-step growth method
Enhanced performance of near-infrared photodetectors based on InGaAs nanowires enabled by a two-step growth method† Heng Zhang,ab Wei Wang,a SenPo Yip,abc Dapan Li,a Fangzhou Li,a Changyong Lan, d Fei Wang,ab Chuntai Liue and Johnny C.
Unusual Phase-Pure Zinc Blende and Highly-Crystalline As-rich InAs1-xSbx Nanowires for High-Mobility Transistors
Unusual Phase-Pure Zinc Blende and Highly-Crystalline As-rich InAs1-xSbx Nanowires for High-Mobility Transistors SenPo Yip, Dapan Li, Fangzhou Li, Wei Wang, Xiaolin Kang, You Meng, Heng Zhang, Zhengxun Lai, Fei Wang and Johnny C Ho Abstract Due to the excellent electrical and optical properties, small bandgap III-V nanowire (NW) materials hold the great promises for future electronics and optoelectronics.
Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires
Abstract Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline InxGa1−xSb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric InxGa1−xSb (0.09 < x < 0.28) NWs on amorphous substrates with the uniform phase-purity and <110 >-orientation via chemical vapor deposition.
Controllable III-V Nanowire Growth via Catalyst Epitaxy
Controllable synthesis of III-V compound semiconductor nanowires (NWs) with high crystallinity and uniformity is essential for their large-scale practical use in various technological applications, especially for those which are grown on non-crystalline substrates.
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