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Shaoying Ke on Muck Rack

Shaoying Ke

As seen in: New Phytologist, Royal Society of Chemistry, Optica
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Articles

High-performance p+-InGaAs/i-InGaAs/n+-Si photodetector achieved by low-quality crystalline Ge interlayer wafer bonding

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By Ziwei Shi, Jie Wang, Shaoying Ke, Wenhao Meng
| Optica Verified
In this study, we present a high-quality bonded InGaAs/Si heterojunction fabricated by a low-quality crystalline germanium (LC-Ge) interlayer wafer bonding technique. This approach effectively isolates the lattices of the InGaAs and Si materials, enabling the formation of a defect-free heterojunction interface that significantly enhances carrier transport efficiency.
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Broadband (300–2200 nm) all-Si Schottky photodetector with ultralow dark current for NIR communication and imaging applications

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By Shaoying Ke, Zhiwei Huang, Xiaolong Jiang, Guanzhou Liu
| Optica Verified
This work presents a near-infrared (NIR) Schottky photodetector based on an ITO/Au nanoparticles (NPs)/Al2O3/Silicon (Si) architecture, exhibiting exceptional dark current suppression (0.4 nA at −2 V) and a broadband photodetection spanning ultraviolet to extended NIR wavelengths (300–2200 nm).
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High-speed low-noise InGaAs/InP PIN photodetectors on a Si platform achieved by oxygen plasma activation bonding

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By Zhiwei Huang, Shaoying Ke, Wenhao Meng, Menghui Guo
| Optica Verified
In this paper, we report the hydrophilic wafer bonding of a 2 in. InP-based InGaAs/InP epitaxial film to a SiO2/Si substrate using oxygen plasma surface activation. The fabricated vertical Si-based InGaAs/InP PIN photodetectors exhibit an exceptionally low surface leakage current of 2.32 nA/cm and a bulk leakage current of 37.47 nA/cm2 at −1 V.
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