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Enhancement of thermoelectric performance in Mg3(Sb,Bi)2 through engineered lattice strain and controlled carrier scattering
Thermoelectric (TE) materials offer promising prospects for direct conversion between heat and electricity, with wide applications in power generation and refrigeration [1], [2], [3], [4]. The efficiency of TE materials is determined by the dimensionless figure of merit (zT), defined as zT = S2σT/(κe + κL), where S、σ、T、κe and κL represent the Seebeck coefficient, electrical conductivity, absolute temperature, electronic thermal conductivity, and lattice thermal conductivity, respectively.
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