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Sudhiranjan Tripathy

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Articles

Fabrication and Switching Performance of 8 A-500 V D‐Mode GaN MISHEMTs

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By Rijo Baby, Shamibrota K. Roy, Sudhiranjan Tripathy, Rangarajan Muralidharan
| Wiley Online Library Verified
Conflict of Interest The authors declare no conflict of interest. References 1 , , , , , , IEEE J. Emerg. Sel. Top Power Electron. 2023, 11, 2707. 2 , , , IEEE Electron. Device Lett. 2018, 39, 1576. 3 , , , , , , , , Fundam. Res. 2022, 2, 462. 4 , , , , , , in 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014, 2014, pp. 63–65, https://doi.org/10.1109/WiPDA.2014.6964625. 5 , Depletion Mode Analog Switches: High Performance Connectivity Without Power, www.onsemi.com, January 07, 2019.
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Fabrication and switching performance of 8A‐500V D‐mode GaN MISHEMTs

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By R. Muralidharan, Rijo Baby, Shamibrota K. Roy, Sudhiranjan Tripathy
| Wiley Online Library Verified
This work discusses the design, fabrication, static device testing, and double-pulse switching performance of multi-finger D-mode GaN MISHEMTs on silicon. Utilizing an MOCVD-grown GaN HEMT stack with a superlattice buffer, field-plated devices with a meandering gate geometry and a total gate width of 30 mm were fabricated. PECVD SiNx was used as the gate dielectric, followed by an optimized bilayer SiNx passivation scheme. Devices with 100 µm gate width had an On/Off ratio of ∽ 108.
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