Sukrith Dev

1 Introduction The ability to characterize the spectral response and find the absorption band edge of thin films and structures is vital to the field of optoelectronics, especially light detectors.[1-3] Typically, spectral information is obtained with a spectrometer, such as a monochromator for shorter wavelengths,[4, 5] or a Fourier transform infrared spectrometer (FTIR) for longer infrared wavelengths.[6, 7] In far-field measurements, such as traditional transmission spectroscopy and...

Abstract Epsilon-near-zero (ENZ) materials such as indium tin oxide (ITO) have recently emerged as a new platform to enhance optical nonlinearities. Here we report a theoretical and experimental study on the origin of nonlinearities in ITO films that are dominated by intraband and interband transitions.

Abstract The measurement of minority carrier lifetimes is vital to determining the material quality and operational bandwidth of a broad range of optoelectronic devices. Typically, these measurements are made by recording the temporal decay of a carrier-concentration-dependent material property following pulsed optical excitation.