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Articles by Thomas Kämpfe
Probabilistic greedy algorithm solver using magnetic tunneling junctions for traveling salesman problem - Nature Communications
Abstract Combinatorial optimization underpins applications in artificial intelligence, logistics, and network design, yet classical techniques such as greedy search and dynamic programming struggle to balance efficiency and solution quality at scale. We present a probabilistic framework that embeds true random number generators based on spin-transfer-torque magnetic tunnel junctions into a greedy solver.
Charge-domain content addressable memory based on ferroelectric capacitive memory for reliable and energy-efficient one-shot learning - Nature Communications
Abstract Non-volatile content addressable memories (NV-CAMs) accelerate memory augmented neural networks (MANNs) for brain-like efficient learning from a few examples or even one example. However, most existing NV-CAMs operate in current domain, posing challenges in reliable, low-power, and sensing-friendly Hamming distance (HD) computation. To address these challenges, this work proposes transferring the computation to charge domain using ferroelectric capacitive memory (FCM).
Deep random forest with ferroelectric analog content addressable memory
Research Article APPLIED SCIENCES AND ENGINEERING Xunzhao Yin https://orcid.org/0000-0003-4656-9545, Franz Müller https://orcid.org/0000-0002-6564-9121, [...] , Ann Franchesca Laguna ann.laguna@dlsu.edu.ph, Chao Li https://orcid.org/0000-0003-3289-3248, [...] , Qingrong Huang, Zhiguo Shi https://orcid.org/0000-0001-9160-048X, Maximilian Lederer https://orcid.org/0000-0002-1739-2747, Nellie Laleni, Shan Deng, [...] , Zijian Zhao https://orcid.org/0000-0001-5191-6447, Mohsen Imani...
Structural and electrical comparison of si and zr doped hafnium oxide thin films and integrated fefets utilizing transmission kikuchi diffraction
The microstructure of ferroelectric hafnium oxide plays a vital role for its application, e.g., non-volatile memories. In this study, transmission Kikuchi diffraction and scanning transmission electron microscopy STEM techniques are used to compare the crystallographic phase and orientation of Si and Zr doped HfO2 thin films as well as integrated in a 22 nm fully-depleted silicon-on-insulator (FDSOI) ferroelectric field effect transistor (FeFET).
Ferroelectric compute-in-memory annealer for combinatorial optimization problems - Nature Communications
Abstract Computationally hard combinatorial optimization problems (COPs) are ubiquitous in many applications. Various digital annealers, dynamical Ising machines, and quantum/photonic systems have been developed for solving COPs, but they still suffer from the memory access issue, scalability, restricted applicability to certain types of COPs, and VLSI-incompatibility, respectively.
Embedding security into ferroelectric FET array via in situ memory operation - Nature Communications
Abstract Non-volatile memories (NVMs) have the potential to reshape next-generation memory systems because of their promising properties of near-zero leakage power consumption, high density and non-volatility. However, NVMs also face critical security threats that exploit the non-volatile property. Compared to volatile memory, the capability of retaining data even after power down makes NVM more vulnerable.
First demonstration of in-memory computing crossbar using multi-level Cell FeFET - Nature Communications
Abstract Advancements in AI led to the emergence of in-memory-computing architectures as a promising solution for the associated computing and memory challenges. This study introduces a novel in-memory-computing (IMC) crossbar macro utilizing a multi-level ferroelectric field-effect transistor (FeFET) cell for multi-bit multiply and accumulate (MAC) operations. The proposed 1FeFET-1R cell design stores multi-bit information while minimizing device variability effects on accuracy.
Zur Bahnbildung und Bildungsforschung
Fachhochschule Erfurt Zur Bahnbildung und Bildungsforschung Zeugnisübergabe an die Absolventen des Masterstudiengangs Europäische Bahnsysteme in Zürich, August 2022 (Foto: Caroline Minjolle) Ausgehend von der Entwicklung des Bahn-Studiums an der Fachhochschule Erfurt zeigt dieser Beitrag auf, welche Potenziale und Möglichkeiten im Bereich der akademischen Qualifizierung von Fachkräften im Bahnbetrieb bestehen.
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