Vo Khuong Dien

Abstract Bilayer transition metal dichalcogenides offer superior electronic properties over their monolayer counterparts, such as higher carrier mobility and electrically switchable polarity1,2,3,4, positioning them as attractive candidates for next-generation transistors1,5 and sliding ferroelectric devices6,7. However, their inherent indirect band gap severely limits light emission, hindering their integration into optoelectronic systems1,2,5,8,9,10.

The understanding of pressure-dependent fundamental properties of materials is very essential, not only for basic scientific knowledge but also for advanced technological applications. Experimental observations have fully revealed the hexagonal-to-rocksalt phase transition in the GaSe system under high pressure.

Monolayer germanium sulfide (GeS) has gained significant attention for its exceptional anisotropic electronic conductance, notable excitonic effects, and wide range of applications. In this study we used density functional theory, the nonequilibrium Green's function, and many-body perturbation theory to investigate electronic transport properties and exciton radiative lifetime of single-layer germanium sulfide.