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Ying-Chun Chao on Muck Rack

Ying-Chun Chao

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Stacking-induced direct band gap in CVD-grown 1H MoS 2 bilayers

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By Tilo Yang, Ju-Yi Huang, Tzu-Hao Kuo, Shao-Yu Chen, Zachariah Hennighausen, Vo Khuong Dien, Meng-Che Wu, Hung-Wei Yen, Jing Kong, Ting-Hua Lu, Kuang-I Lin, Yann-Wen Lan, I-Tong Chen, Min-Jia Zhang, Hsing-Yeh Li, Ying-Chun Chao, Heng-Wen Wei, Tzu-Hung Chuang, Der-Hsin Wei
| Nature Verified
Abstract Bilayer transition metal dichalcogenides offer superior electronic properties over their monolayer counterparts, such as higher carrier mobility and electrically switchable polarity1,2,3,4, positioning them as attractive candidates for next-generation transistors1,5 and sliding ferroelectric devices6,7. However, their inherent indirect band gap severely limits light emission, hindering their integration into optoelectronic systems1,2,5,8,9,10.
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