Wen-Jin Yin

Hydrogen has emerged as a highly desirable energy carrier due to its non-polluting emissions and high energy density, making it an attractive replacement for traditional fuels [1], [2], [3], [4]. The primary process used in industry to produce hydrogen is via steam reforming of methane (SRM), which involves the production of synthesis gas (a mixture of CO and H2) followed by a water–gas shift (WGS) reaction [5], [6].

Transition metal chalcogenides have attracted considerable attention for the further development of nanoscale device, however low carrier mobility seriously prevents its further application. Here, the first-principles calculations are used to explore the structural, electronic, and carrier mobility properties of few layer Janus MoSSe in different types of stacking. The result shows that AC-stacking is the most favored stacking regardless of combination mode.

Transition metal oxides (TMOs) have attracted extensive research attention as promising anode materials for lithium ion batteries due to their high theoretical capacities. However, their applications have been hindered by their poor electronic conductivity and drastic volume change in the reversible conversion reaction.