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Monolithically integrating polarization-doped InGaN p-FET and GaN n-FET for complementary logic circuitry
Abstract INTRODUCTION RESULTS DISCUSSION MATERIALS AND METHODS Acknowledgments Supplementary Materials REFERENCES Information & Authors Metrics & Citations View Options References Figures Tables Media Share Abstract Low-efficiency p-type impurity doping has long impeded the practical adoption of wide-bandgap semiconductors in integrated circuits (ICs).
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