Apu Chandra Das on Muck Rack

Apu Chandra Das

As seen in: Cell Reports Physical Science
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Articles

Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors Click to copy article link Article link copied!

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By Apu Chandra Das, Agniva Paul, Mohit Tewari
| dx.doi.org
Introduction Click to copy section linkSection link copied! Hafnium oxide (HfO2) or hafnium–zirconium oxide (Hf0.5Zr0.5O2/HZO)-based ferroelectric field-effect transistors (FeFETs) have rapidly emerged as leading candidates for embedded nonvolatile memory technologies.
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Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing Click to copy article link Article link copied!

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By Apu Chandra Das, Asim Senapati, gautham kumar
| dx.doi.org
Nonvolatile ferroelectric field-effect transistors (FeFETs) based on hafnia have re-emerged as promising contenders for embedded nonvolatile memory and in-memory computing. Their appeal lies in the unique combination of CMOS compatibility, voltage-driven programming, and low-energy readout, all realized in a simple one-transistor cell.
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Long-term reliability of naturally aged hafnium oxide ferroelectric transistors for energy-efficient embedded memory

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By Asim Senapati, Apu Chandra Das, Agniva Paul, gautham kumar, Sayani Majumdar, Andrea Padovani, Sourav De, Masud Rana Sk, Yannick Raffel, Ricardo Olivo, Padma Srivari, Bhaswar Chakrabarti
| Cell Reports Physical Science Verified
Keywords FeFET hafnium oxide reliability endurance retention memory window interface traps oxide traps charge pumping trap dynamics pulse shaping temperature dependence embedded memory CMOS compatibility Introduction Hafnium oxide (HfO2)-based ferroelectric field-effect transistors (FeFETs) have rapidly emerged as frontrunners in the race for next-generation non-volatile memory (NVM).1,2,3 Their promise stems from a unique combination of attributes: sub-nanosecond polarization switching,4...
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