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Bhaswar Chakrabarti on Muck Rack

Bhaswar Chakrabarti

As seen in: Cell Reports Physical Science
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Articles

Long-term reliability of naturally aged hafnium oxide ferroelectric transistors for energy-efficient embedded memory

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By Asim Senapati, Apu Chandra Das, Agniva Paul, gautham kumar, Sayani Majumdar, Andrea Padovani, Sourav De, Masud Rana Sk, Yannick Raffel, Ricardo Olivo, Padma Srivari, Bhaswar Chakrabarti
| Cell Reports Physical Science Verified
Keywords FeFET hafnium oxide reliability endurance retention memory window interface traps oxide traps charge pumping trap dynamics pulse shaping temperature dependence embedded memory CMOS compatibility Introduction Hafnium oxide (HfO2)-based ferroelectric field-effect transistors (FeFETs) have rapidly emerged as frontrunners in the race for next-generation non-volatile memory (NVM).1,2,3 Their promise stems from a unique combination of attributes: sub-nanosecond polarization switching,4...
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