gautham kumar

Nonvolatile ferroelectric field-effect transistors (FeFETs) based on hafnia have re-emerged as promising contenders for embedded nonvolatile memory and in-memory computing. Their appeal lies in the unique combination of CMOS compatibility, voltage-driven programming, and low-energy readout, all realized in a simple one-transistor cell.

Keywords FeFET hafnium oxide reliability endurance retention memory window interface traps oxide traps charge pumping trap dynamics pulse shaping temperature dependence embedded memory CMOS compatibility Introduction Hafnium oxide (HfO2)-based ferroelectric field-effect transistors (FeFETs) have rapidly emerged as frontrunners in the race for next-generation non-volatile memory (NVM).1,2,3 Their promise stems from a unique combination of attributes: sub-nanosecond polarization switching,4...

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