Ashley Galanti

1. Introduction Nanomaterial-based field-effect transistor (FET) technology is a growing research area because of its broad sensing ability through the use of semiconducting nanostructures and surface recognition elements for selective detection of target analytes. Analytes can range from photons all the way to clinical biomarkers, and the nanomaterial used in the active gate region may include silicon nanowires, transition metal dichalcogenides, or carbon-based materials, such as graphene [1].

Preprint Article Version 1 This version is not peer-reviewed Version 1 : Received: 18 March 2024 / Approved: 19 March 2024 / Online: 19 March 2024 (16:29:18 CET) Galanti, A.M.; Haidekker, M. Low Cost Source Measure Unit (SMU) to Characterize Sensors Built on Graphene-Channel Field-Effect Transistors. Preprints 2024, 2024031169. https://doi.org/10.20944/preprints202403.1169.v1 Galanti, A.M.; Haidekker, M.