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Articles by Chen Ge
Levels of myeloid-derived suppressor cell-like cells in early sepsis: a comparative study with non-septic patients
Abstract Background: Myeloid-derived suppressor cells (MDSCs) are immature myeloid cells with immunosuppressive functions. While early expansion of MDSCs may be protective in various pathological states, their accumulation and role might differ in sepsis. This study aimed to compare the differences in circulating myeloid cells with MDSC phenotypes and their subsets between septic and non-septic patients in the early stage. Methods: This was a prospective, single-center, observational cohort study.
Grain boundary stabilization of fluorite ferroelectrics
Abstract Grain boundaries (GBs) can tailor the macroscopic properties of polycrystalline materials via their intrinsic structural and electronic states. However, as independent heterointerfaces, their role in stabilizing grain phases remains largely unexplored, especially at the atomic scale. Here we report that chemically ordered heterogeneous GBs in ZrO2 thin films act as active stabilizers of a metastable polar phase.
Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography - Nature Communications
Abstract Hf0.5Zr0.5O2 emerges as a promising candidate for next-generation ferroelectric memories and transistors. However, the intrinsic nature of its ferroelectricity remains a subject of debate, primarily stemming from challenges in the precise characterization of nanoscale polycrystallinity and multiphase coexistence.
Advancing antiferromagnetic nitrides via metal alloy nitridation - Communications Materials
Abstract Nitride materials, valued for their structural stability and exceptional physical properties, have garnered significant interest in both fundamental research and technological applications. The fabrication of high-quality nitride thin films is essential for advancing their use in microelectronics and spintronics. Yet, achieving single-crystal nitride thin films with excellent structural integrity remains a challenge.
Characterizing G-type antiferromagnetism quantitatively with optical second harmonic generation - Light: Science & Applications
Abstract Antiferromagnetism has become a promising candidate for the next generation electronic devices due to its thermal stability, low energy consumption, and fast switching speed. However, the canceling of the net magnetic moment in antiferromagnetic order presents great challenge on quantitative characterization and modulation, hindering its investigation and application.
Early Elevation of Monocytic-to-Polymorphonuclear Myeloid-Derived Supp
Back to Journals » Journal of Inflammation Research » Volume 18 Authors Jia L, Long L, Wang H, Ge C, Zhang Z, Zhang Z, Zhao H Received 13 January 2025 Accepted for publication 13 May 2025 Published 27 May 2025 Volume 2025:18 Pages 6807—6819 DOI https://doi.org/10.2147/JIR.S517333 Checked for plagiarism Yes Review by Single anonymous peer review Peer reviewer comments 2 Editor who approved publication: Professor Ning Quan Lijing Jia, Ling Long, Huawei Wang, Chen Ge, Ze Zhang, Zhiyang Zhang,...
Effect of High Temperature on Micro-Structure and Mechanical Properties of Fiber-Reinforced Cement-Based Composites
All articles published by MDPI are made immediately available worldwide under an open access license. No special permission is required to reuse all or part of the article published by MDPI, including figures and tables. For articles published under an open access Creative Common CC BY license, any part of the article may be reused without permission provided that the original article is clearly cited. For more information, please refer to https://www.mdpi.com/openaccess.
Ferroelastically protected reversible orthorhombic to monoclinic-like phase transition in ZrO2 nanocrystals - Nature Materials
Abstract Robust ferroelectricity in nanoscale fluorite oxide-based thin films enables promising applications in silicon-compatible non-volatile memories and logic devices. However, the polar orthorhombic (O) phase of fluorite oxides is a metastable phase that is prone to transforming into the ground-state non-polar monoclinic (M) phase, leading to macroscopic ferroelectric degradation.
Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model
1. Introduction Fifth-generation communication technology (5G) adopts sophisticated modulation techniques such as QAM (quadrature amplitude modulation) and OFDM (orthogonal frequency division multiplexing), resulting in a high peak-to-average power ratio (PAPR) in its signal waveform [1,2]. Doherty power amplifiers can maintain high efficiency both in saturation and power back-off, making them suitable for handling 5G communication signals [3].
Strain-mediated phase crossover in Ruddlesden–Popper nickelates - Communications Materials
Abstract Recent progress on the signatures of pressure-induced high-temperature superconductivity in Ruddlesden–Popper (RP) nickelates (Lan+1NinO3n+1) has attracted growing interest in both theoretical calculations and experimental efforts. The fabrication of high-quality single-crystalline RP nickelate thin films is critical for possible reducing the superconducting transition pressure and advancing applications in microelectronics in the future.
High-performance terahertz modulators induced by substrate field in Te-based all-2D heterojunctions - Light: Science & Applications
Abstract High-performance active terahertz modulators as the indispensable core components are of great importance for the next generation communication technology. However, they currently suffer from the tradeoff between modulation depth and speed.
High-order sensory processing nanocircuit based on coupled VO2 oscillators - Nature Communications
Abstract Conventional circuit elements are constrained by limitations in area and power efficiency at processing physical signals. Recently, researchers have delved into high-order dynamics and coupled oscillation dynamics utilizing Mott devices, revealing potent nonlinear computing capabilities. However, the intricate yet manageable population dynamics of multiple artificial sensory neurons with spatiotemporal coupling remain unexplored.
Strong Dzyaloshinskii-Moriya interaction in two-dimensional magnets via lithium absorption
Dzyaloshinskii-Moriya interaction (DMI) is of particular interest as it plays a primary role in stabilizing topological chiral magnetism such as skyrmions and has been intensively studied due to its potential applications for next-generation information storage technologies. For two-dimensional (2D) magnets, although Janus structure offers a paradigm to realize strong DMI, further studies are confined by the strict fabrication and the necessity of heavy atoms.
A neuromorphic physiological signal processing system based on VO2 memristor for next-generation human-machine interface - Nature Communications
Abstract Physiological signal processing plays a key role in next-generation human-machine interfaces as physiological signals provide rich cognition- and health-related information. However, the explosion of physiological signal data presents challenges for traditional systems. Here, we propose a highly efficient neuromorphic physiological signal processing system based on VO2 memristors.
Magnetoelectric coupling in multiferroics probed by optical second harmonic generation - Nature Communications
Abstract Magnetoelectric coupling, as a fundamental physical nature and with the potential to add functionality to devices while also reducing energy consumption, has been challenging to be probed in freestanding membranes or two-dimensional materials due to their instability and fragility.
Three-port approach of LCBDE
Back to Journals » International Journal of General Medicine » Volume 16 Original Research Gastroenterology Authors Zhao C , Xu Z, Hu W, Ge C, Zhang Z, Dai Z, Zhang S, Tang N, Wang W, Gu J , Chen C , He S Received 4 April 2023 Accepted for publication 7 August 2023 Published 11 August 2023 Volume 2023:16 Pages 3435—3445 DOI https://doi.org/10.2147/IJGM.S415752 Checked for plagiarism Yes Review by Single anonymous peer review Peer reviewer comments 2 Editor who approved publication: Dr Hossam...
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Research Article Benhao Li, Benhao Li Shenzhen University, School of Medicine, CHINA Search for more papers by this author Hengke Liu, Hengke Liu Shenzhen University, School of Medicine, CHINA Search for more papers by this author Yaling He, Yaling He Shenzhen University, School of Medicine, CHINA Search for more papers by this author Mengyao Zhao, Mengyao Zhao National University of Singapore, Department of Chemical and Biomolecular Engineering, SINGAPORE Search for more papers by this...
Extra storage capacity in transition metal oxide lithium-ion batteries revealed by in situ magnetometry
Abstract In lithium-ion batteries (LIBs), many promising electrodes that are based on transition metal oxides exhibit anomalously high storage capacities beyond their theoretical values. Although this phenomenon has been widely reported, the underlying physicochemical mechanism in such materials remains elusive and is still a matter of debate.
Modeling the joint distribution of firm size and firm age based on grouped data
Loading metrics Open Access Peer-reviewed Research Article Chen Ge, Shu-Guang Zhang, Bin Wang Chen Ge, Shu-Guang Zhang, Bin Wang Published: July 15, 2020 https://doi.org/10.1371/journal.pone.0235282 Figures Abstract The firm size distribution is highly skewed to the right and often follows a power law. In practice, it is common that firm size and firm age data are aggregated and released as grouped data to avoid disclosure of confidential information.
Giant Electroresistance in Ferroionic Tunnel Junctions
Highlights • Ferroionic tunnel junctions with ON/OFF ratio of 5.1×107 at 300 K were demonstrated • Both ferroelectric and ionic degrees of freedom were exploited in the device • Field-induced oxygen vacancy migration switches it between FTJ and Schottky junction Summary Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology.
Effects of line defects on the electronic and optical properties in strain-engineered WO3 thin films
Tungsten oxide (WO3) is a promising material with a wide spectrum of important applications including smart windows, clean energy, and gas sensing. A variety of ionic defects in WO3 have attracted much attention due to their ability to greatly enhance these functionalities. In this work, we report the discovery of a new line defect in WO3 epitaxial thin films obtained via a strain engineering approach, and the modification of electronic structures in strain engineered WO3 films.
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