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Sonu Daryanani

As seen in: Power Electronics News, EE Times, Embedded, EE Times Asia, EEWeb, EE Times Europe, EDN Asia, EDN Taiwan
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Articles

Why Sensor Fusion Matters for Drone Navigation and Detection

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By Sonu Daryanani
| Embedded Verified
Why Sensor Fusion Matters for Drone Navigation and Detection A variety of sensors are used on drones for spatial awareness, terrain and target mapping, obstacle navigation, and optimizing flight paths to the target. Anti-drone defense systems similarly rely on many sensors for detection, flight-path tracking, and drone classification. Each sensor has its strengths and weaknesses.
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Power GaN Device Scaling Challenges

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By Sonu Daryanani
| Power Electronics News
The lateral gallium nitride (GaN) high-electron-mobility transistor (HEMT) has found strong success in the <700 V and <100 A power conversion space. In this article, we look at some of the scaling possibilities for GaN to potentially extend this application space and compete with silicon carbide (SiC) or silicon IGBTs in the higher-power arena in terms of performance and cost. GaN-on-Si is the mainstream power HEMT technology.
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並聯RB-IGCT實現HVDC雙向固態斷路器 - 電子技術設計

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By Sonu Daryanani
| EDN Taiwan
作者 : Sonu Daryanani 並聯RB-IGCT可實現高效率、雙向固態直流斷路器，用於HVDC電網故障切斷。 高壓直流(HVDC)電網相較於交流(AC)電網具備許多優勢，包括較低的傳輸損耗、更容易整合再生能源發電與儲能，以及更高的電力潮流控制能力。HVDC電網中的關鍵元件之一，是直流(DC)固態斷路器(SSCB)。反向阻斷整合閘極換流閘流體(RB-IGCT)可提供低損耗的雙向SSCB解決方案。 RB-IGCT的優勢 IGCT已廣泛應用於工業馬達驅動、鐵路電源、HVDC電力轉換等高功率應用。晶圓上整合的閘極控制結構可實現低電感設計，而低導通電壓與雙極性導電調變則有助於降低導通損耗。傳統的非對稱IGCT(A-IGCT)只能在正向進行有效的阻斷與導通。若將外部續流二極體與A-IGCT串聯，即可提供反向阻斷能力；此外，將這組元件以反並聯方式配置，也能實現雙向導通。 RB-IGCT採用對稱結構，本身即可提供雙向阻斷能力。將兩個RB-IGCT反並聯，同樣可以實現雙向導通。反向導通IGCT...
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