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Articles by Heejun Yang
Monolayer van der Waals kagome lattice for high-temperature flat-band physics
Abstract Kagome lattice materials host a variety of intriguing quantum phenomena arising from the intrinsic interplay of topology, electron correlations and geometric frustration. Even though previous studies have primarily focused on bulk three-dimensional kagome materials, the realization of an ideal two-dimensional kagome system has remained a long-standing goal.
Spatially deterministic nucleation of 2D semiconductors by etching flux
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Abstract Nucleation control is fundamental to semiconductor deposition, governing when, where and how crystalline materials form. Conventional strategies can regulate nucleation density and, through area-selective growth, confine deposition to designated regions1,2,3,4,5,6,7,8,9,10,11,12,13.
By JeongWon Bourdais Park, Jiyun Kim, Sumin Kang, Jieun Oh, Saeyoung Oh, Seunghye Shin, Jaehyun Lee, Minsu Kim, Gunho Moon, Mingu Kang, Min-Gyu Kim, Junhyeok Kim, Gichang Noh, Dongyoung Kim, Seongdae Kwon, Chengyun Hong, Minseok Choi, Yongjoon Lee, Joonghoon Choi, Guanning Shao, Seung Jae Kwak, Tae Kim, Jeehwan Kim, Yongjoo Kim, Sung-Yool Choi, Heejun Yang, Jonghwan Kim, Byungjo Kim, Woo-Hee Kim, Chang-Soo Lee, Kibum Kang, Youngmin Sunwoo, Seonghwan Jo, Donghyeop Lee, Changhun Eom, Seohyun Jeong, Chaejeong Yun, Donggeon Park, Hyeongjin Lim, Junhyuk Tak
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Nature
Verified
Probing Intrinsic Magnetic Phases in Low-Dimensional Nearly Twin-Free NiPS 3 Single Crystals
1 Introduction Magnetic van der Waals materials have emerged as promising building blocks for exploring fundamental low-dimensional magnetism and developing next-generation spintronic applications [1-4]. Among these, the transition-metal phosphorus trichalcogenide NiPS3 has attracted significant interest due to its fascinating coherent exciton features, which are intimately coupled to its underlying zigzag antiferromagnetic order [5].
Shadow Removal for Enhanced Nighttime Driving Scene Generation
All articles published by MDPI are made immediately available worldwide under an open access license. No special permission is required to reuse all or part of the article published by MDPI, including figures and tables. For articles published under an open access Creative Common CC BY license, any part of the article may be reused without permission provided that the original article is clearly cited. For more information, please refer to https://www.mdpi.com/openaccess.
2D amorphous solids for sub-nanometer scale devices - Nano Convergence
For several decades, high-dielectric (κ) amorphous solids have been widely utilized as key components in capacitors for semiconducting devices. In addition, 2D amorphous dielectric solids have shown significant promise as ultra-thin dielectric layers in nanometer-scaled electronics. Despite their potential, wide-gap, high-κ, layered dielectric solids with vdW structures have been less explored and rarely used.
Tailoring phases on the device - Nature Materials
A phase engineering strategy, using a device configuration consisting of 2D channel materials and patterned electrodes, has been demonstrated. It achieves various phase configurations of 2D materials and versatile functions that can be tailored in situ.
Rapid Monitoring of Scale Precipitation and Inhibition in Geothermal Fluid Using Optical Fiber Sensor Based on Surface Plasmon Resonance
All articles published by MDPI are made immediately available worldwide under an open access license. No special permission is required to reuse all or part of the article published by MDPI, including figures and tables. For articles published under an open access Creative Common CC BY license, any part of the article may be reused without permission provided that the original article is clearly cited. For more information, please refer to https://www.mdpi.com/openaccess.
Cation-eutaxy-enabled III–V-derived van der Waals crystals as memristive semiconductors - Nature Materials
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Abstract Novel two-dimensional semiconductor crystals can exhibit diverse physical properties beyond their inherent semiconducting attributes, making their pursuit paramount. Memristive properties, as exemplars of these attributes, are predominantly manifested in wide-bandgap materials. However, simultaneously harnessing semiconductor properties alongside memristive characteristics to produce memtransistors is challenging.
By Seung-hyun Oh, Giyeok Lee, Taehoon Kim, Narguess Nemati, Kyuho Lee, Jeongmin Kim Verified, Soohyung Park, Jungkil Kim, In Kyu Chung, Hyunyong Choi, Dohun Kim, Jae-Hyun Lee, Heejun Yang, Yunseok Kim, Hong-Gyu Park, Wooyoung Lee, Miso Kim, Dong Won Chun, Myung Joon Han, Aron Walsh, Aloysius Soon, Jinwoo Cheon, Cheolmin Park, Jong-Young Kim, Jee-Hwan Bae
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Nature
Verified
Rapid Monitoring of Scale Precipitation and Inhibition in Geothermal Fluid Using Optical Fiber Sensor Based on Surface Plasmon Resonance
Preprint Article Version 1 This version is not peer-reviewed Version 1 : Received: 13 August 2024 / Approved: 13 August 2024 / Online: 13 August 2024 (13:16:06 CEST) Hosoki, A.; Sugiura, K.; Okazaki, T.; Yang, H.; Kuramitz, H.; Ueda, A.; Terai, A. Rapid Monitoring of Scale Precipitation and Inhibition in Geothermal Fluid Using Optical Fiber Sensor Based on Surface Plasmon Resonance. Preprints 2024, 2024080931.
Topological magnon polarons in honeycomb antiferromagnets with spin-flop transition
We theoretically investigate the thermal Hall transport of magnon-polarons in a two-dimensional honeycomb antiferromagnetic insulator under the influence of a perpendicular magnetic field, varying in strength. The application of a perpendicular magnetic field induces a magnetic phase transition from the collinear antiferromagnetic phase to the spin-flop phase, leading to a significant alteration in Hall transport across the transition point.
Area-selective atomic layer deposition on 2D monolayer lateral superlattices - Nature Communications
Abstract The advanced patterning process is the basis of integration technology to realize the development of next-generation high-speed, low-power consumption devices. Recently, area-selective atomic layer deposition (AS-ALD), which allows the direct deposition of target materials on the desired area using a deposition barrier, has emerged as an alternative patterning process. However, the AS-ALD process remains challenging to use for the improvement of patterning resolution and selectivity.
Thermal Hall effects due to topological spin fluctuations in YMnO3 - Nature Communications
Abstract The thermal Hall effect in magnetic insulators has been considered a powerful method for examining the topological nature of charge-neutral quasiparticles such as magnons. Yet, unlike the kagome system, the triangular lattice has received less attention for studying the thermal Hall effect because the scalar spin chirality cancels out between adjacent triangles. However, such cancellation cannot be perfect if the triangular lattice is distorted.
Quantum Sensing of Thermoelectric Power in Low‐Dimensional Materials (Adv. Mater. 27/2023)
Graphical Abstract Quantum Sensing of Thermopower Thermopower has been extensively studied in low-dimensional materials where quantum confinement and spin textures can largely modulate thermopower generation. In article number 2106871, Heejun Yang, Suyeon Cho, and co-workers introduce the quantum sensing of thermopower, including the unique role of low-dimensionality, defects, spins, and relativistic effects.
Multi-neuron connection using multi-terminal floating–gate memristor for unsupervised learning - Nature Communications
Abstract Multi-terminal memristor and memtransistor (MT-MEMs) has successfully performed complex functions of heterosynaptic plasticity in synapse. However, theses MT-MEMs lack the ability to emulate membrane potential of neuron in multiple neuronal connections. Here, we demonstrate multi-neuron connection using a multi-terminal floating-gate memristor (MT-FGMEM). The variable Fermi level (EF) in graphene allows charging and discharging of MT-FGMEM using horizontally distant multiple electrodes.
Sizable suppression of magnon Hall effect by magnon damping in ${\mathrm{Cr}}_{2}{\mathrm{Ge}}_{2}{\mathrm{Te}}_{6}$
Abstract Two-dimensional Heisenberg honeycomb ferromagnets are expected to have interesting topological magnon effects, as their magnon dispersion can have Dirac points. The Dirac points are gapped with the finite second-nearest-neighbor Dzyaloshinskii-Moriya interaction, providing nontrivial Berry curvature with the finite magnon Hall effect. However, it is unknown how the topological properties are affected by magnon damping.
Quantum Sensing of Thermoelectric Power in Low‐Dimensional Materials
Thermoelectric power, has been extensively studied in low-dimensional materials where quantum confinement and spin textures can largely modulate thermopower generation. In addition to classical and macroscopic values, thermopower also varies locally over a wide range of length scales, and is fundamentally linked to electron wave functions and phonon propagation.
Correction: The axillary vein and its tributaries are not in the mirror image of the axillary artery and its branches
All four authors should not have been attributed equal contribution to this work. Citation: Lee H, Bang J, Kim S, Yang H (2020) Correction: The axillary vein and its tributaries are not in the mirror image of the axillary artery and its branches. PLoS ONE 15(3): e0230471. https://doi.org/10.1371/journal.pone.0230471 Published: March 10, 2020 Copyright: © 2020 Lee et al.
In-plane electric field confinement engineering in graphene-based hybrid plasmonic waveguides
Abstract Surface plasmon polaritons (SPPs) are surface modes confined to metal-dielectric interfaces. This confinement enhances the electromagnetic field and therefore, SPPs are sensitive to surface conditions. The properties of two dimensional materials such as graphene thus can be enhanced and used to engineer nanoscale components for optical communications. However, SPPs are transverse magnetic modes with electric fields out-of-plane that limit flexibility.
Erratum: Structural and quantum-state phase transitions in van der Waals layered materials
In the version of this Progress Article originally published, one of the t states in Fig. 2a was missing; there should have been three. The original and corrected Fig. 2a panels are shown below.
Erratum: Structural and quantum-state phase transitions in van der Waals layered materials
In the version of this Progress Article originally published, the title contained a typographical error and should have read 'Structural and quantum-state phase transitions in van der Waals layered materials'.
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